久久一区二区三区不卡,国产亚洲sss在线播放,欧美怡红院免费的全部视频,婷婷在线免费视频,日本美女胸膜香蕉视频,解开杨幂的胸罩视频,罗晋唐嫣结婚视频

CN EN
Home
About Us
Newpros
New N150V SGT MOSFETs
New N150V SGT MOSFETs Back
 PDF

Introduction Power over Ethernet Protocol (PoE) has been available for many years. A new standard IEEE 802.3bt was approved in 2018, which increases the maximum power that can be transmitted through twisted-pair Ethernet cables and encourages new PoE applications to pursue higher power density.Current power supply equipment (PSE) provides up to 100W of power and supports 8 different power levels;Power Device (PD) will be able to use up to 71W of power.Yangjie launched N150V serialized products for IEEE802.3af&at&bt.Using SGT technology, it has higher switching speeds and lower losses than traditional Trench MOS products.
Features 1、Using SGT technology, the product has low internal resistance and excellent switching characteristics
2、PDFN5060, SO-8, TO252, ITO220AB multiple packages are optional
3、Applicable to IEEE802.3af&at&bt protocol PD power supply
SPECIFICATION

YJD18G15A YJG15G15A YJG60G15HJ YJS05G15A

Related new products

SOD-123FL package power ESD

SGT N80-85V Power MOSFET

TOLL Package SiC MOSFET

New plug-in rectifier bridge -JC that follows the trend of flattening

High current patch rectifier bridge

SOD-123HE TVS Diode

IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application

IGBT 50A 1200V Discrete for Industrial Control

Three-phase Rectifier Module N0/N1 Product

GBU Package Extended 35A-50A High Current Series Products